*rohs directive 2002/95/ec jan 27 2003 including annex november 2006 - revised may 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4a250h3bj overvoltage protector tisp4a250h3bj asymmetrical-bidirectional thyristor overvoltage protector smb package (top view) device symbol description the tisp4a250h3bj is an asymmetrical bidirectional overvoltage protector. it is designed to limit the peak voltages on the ring line terminal of the lcas (line card access switch) such as le75181, le75183 and le75282. the tisp4a250h3bj must be connected with bar-indexed terminal 1 to the protective ground, and terminal 2 to the ring conductor. the tisp4a250h3bj voltages are chosen to give adequate lcas ring line terminal protection for all switch conditions. the most potentially stressful condition is low level power cross when the lcas switches are closed. under this condition, the tisp4a25 0h3bj limits the voltage and corresponding lcas dissipation until the lcas thermal trip operates and opens the switches. under open-circuit ringing conditions, the line ring conductor will have high peak voltages. for battery backed ringing, the ri ng conductor will have a larger peak negative voltage than positive, i.e. the peak voltages are asymmetric. the tisp4a250h3bj has a similar voltage asymmetry and will allow the maximum possible ringing voltage, while giving the most effective protection. on a connected line, the tip conductor will have much smaller voltage levels than the open-circuit ring conductor values. here a tisp4xxxh3bj series symmetrical voltage protector gives adequate protection. overvoltages are initially clipped by breakdown clamping. if sufficient current is available from the overvoltage, the breakdow n voltage will rise to the breakover level, which causes the device to switch into a low-voltage on-state condition. this switching actio n removes the high voltage stress from the following circuitry and causes the current resulting from the overvoltage to be safely diverte d through the protector. the high holding (switch off) current helps prevent d.c. latchup as the diverted current subsides. how to order ring line protection for: ? lcas (line card access switch) such as le75181, le75183 and le75282 voltages optimized for: ? battery-backed ringing circuits maximum ringing a.c..................................................104 vrms maximum battery voltage ................................................. -52 v rated for international surge wave shapes 12 (ring) (ground) md-smb-006-a terminal typical application names shown in parenthesis (ring) sd-tisp4a-001-a (ground) device name v drm v v (bo) v tisp4a250h3bj +100 +125 -200 -250 wave shape standard i ppsm a 2/10 gr-1089-core 500 8/20 iec 61000-4-5 300 10/160 tia-968-a 250 10/700 itu-t k.20/21/45 200 10/560 tia-968-a 160 10/1000 gr-1089-core 100 device package carrier order as marking code standard quantity tisp4a250h3bj smb embossed tape reeled tisp4a250h3bjr-s 4a250h 3000 *rohs compliant ..........................................ul recognized component
november 2006 - revised may 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4a250h3bj overvoltage protector absolute maximum ratings, t a = 25 c (unless otherwise noted) t i n u e u l a v l o b m y s g n i t a r v ) 1 e t o n e e s ( e g a t l o v e t a t s - f f o k a e p e v i t i t e p e r drm +100 -200 v non-repetitive peak impulse current (see notes 2 and 3) 2/10 s (gr-1089-core, 2/10 s voltage wave shape) 8/20 s (iec 61000-4-5, 1.2/50 s voltage, 8/20 s current combination wave generator) 10/160 s (tia-968-a, 10/160 s voltage wave shape) 5/310 s (itu-t k.44, 10/700 s voltage wave shape used in k.20/21/45) 5/320 s (tia-968-a, 9/720 s voltage wave shape) 10/560 s (tia-968-a, 10/560 s voltage wave shape) 10/1000 s (gr-1089-core, 10/1000 s voltage wave shape) i ppsm ?00 ?00 ?50 ?00 ?00 ?60 ?00 a non-repetitive peak on-state current (see notes 2, 3 and 4) i tsm 55 60 2.2 a 20 ms, 50 hz (full sine wave) 16.7 ms, 60 hz (full sine wave) 1000 s, 50 hz or 60 hz a.c. initial rate of rise of on-state currrent, exponential current ramp. maximum ramp value < 200 a di t /dt 400 a/ s junction temperature t j -40 to +150 ? storage temperature range t stg -65 to +150 ? notes: 1. see figure 6 for voltages at other temperatures. 2. initially the device must be in thermal equilibrium with t j = 25 ?. 3. the surge may be repeated after the device returns to its initial conditions. 4. eia/jesd51-2 environment and eia/jesd51-3 pcb with standard footprint dimensions connected with 5 a rated printed wiring track widths. see figure 5 for the current ratings at other durations. derate current values at -0.61 %/ c for ambient temper atures above 25 ?. overload ratings, t a = 25 c (unless otherwise noted) t i n u e u l a v l o b m y s g n i t a r maximum overload on-state current without open circuit, 50 hz or 60 hz a.c. (see note 5) 0.03 s 0.07 s 1.6 s 5.0 s 1000 s i t(ov)m 60 40 8 7 2.2 a rms note: 5. peak overload on-state current during a.c. power cross tests of gr-1089-core and ul 1950/60950. these electrical stress levels may damage the tisp4a250h3bj silicon die. after test, the pass criterion is either that the device is functional or, if it is faulty, that it has a short-circuit fault mode. in the short-circuit fault mode, the following equipment is protected as the device is a pe rmanent short across the line. the equipment would be unprotected if an open-circuit fault mode developed.
november 2006 - revised may 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4a250h3bj overvoltage protector electrical characteristics, t a = 25 c (unless otherwise noted) t i d n o c t s e t r e t e m a r a p t i n u x a m p y t n i m s n o i i drm repetitive peak off-state current v d = v drm t a = 25 c t a = 85 c 5 10 a v (bo) breakover voltage dv/dt = 250 v/ms, r source =300? +125 -250 v i (bo) breakover current dv/dt = 250 v/ms, r source = 300 ? 150 600 ma v t on-state voltage i t = 5 a, t w v 3 s 0 0 1 = i h holding current i t a m 0 0 6 0 5 1 s m / a m 0 3 = t d / i d , a 5 = dv/dt critical rate of rise of off-state voltage linear voltage ramp maximum ramp value < 0.85v drm 5 kv/s c o off-state capacitance f = 1 mhz, v d v s m r v 1 = d f p 2 7 v 2 = thermal characteristics, t a = 25 c (unless otherwise noted) t i n u x a m p y t n i m s n o i t i d n o c t s e t r e t e m a r a p r ja junction to ambien t thermal resistance eia/jesd51-3 pcb, i t = i tsm(1000) (see note 6) 113 c/w 265 mm x 210 mm populated line card, 4-layer pcb, i t = i tsm(1000) 50 note: 6. eia/jesd51-2 environment and pcb has standard footprint dimensions connected with 5 a rated printed wiring track widths.
november 2006 - revised may 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4a250h3bj overvoltage protector parameter measurement information figure 1. voltage-current characterist ic for the ring and ground terminals all measurements are referenced to the ground terminal -v i (br) v (br) v (br)m v drm i drm v d i h i t v t i trm i ppsm v (bo) i (bo) i d quadrant i switching characteristic +v +i v (bo) i (bo) i (br) v (br) v (br)m v drm i drm i d i h i t v t i trm i ppsm -i quadrant iii switching characteristic i tsm i tsm v d pm-tisp4axxx-002-a
november 2006 - revised may 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4a250h3bj overvoltage protector typical characteristics . 3 e r u g i f . 2 e r u g i f figure 4. off-state current vs junction temperature t j - junction temperature - c -25 0 25 50 75 100 125 150 |i d | - off-state current - a 0 001 0?1 0 1 1 10 100 tchag v d = 50 v normalized breakover voltage vs junction temperature t j - junction temperature - ? -25 0 25 50 75 100 125 150 normalized breakover voltage 0.95 1.00 1.05 1.10 tc4haf normalized holding current vs junction temperature t j - junction temperature - ? -25 0 25 50 75 100 125 150 normalized holding current 0.4 0.5 0.6 0.7 0.8 0.9 1.5 2.0 1.0 tc4had
november 2006 - revised may 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4a250h3bj overvoltage protector rating and thermal information . 6 e r u g i f . 5 e r u g i f non-repetitive peak on-state current vs current duration t - current duration - s 0 1 1 10 100 1000 i tsm(t) - non-repetitive peak on-state current - a 1.5 2 3 4 5 6 7 8 9 15 20 30 10 ti4hac v gen = 600 vrms, 50/60 hz r gen = 1.4*v gen /i tsm(t) eia/jesd51-2 environment eia/jesd51-3 pcb t a = 25 ? v drm derating factor vs minimum ambient temperature t amin - minimum ambient temperature - c -35 -25 -15 -5 5 15 25 -40-30-20-10 0 10 20 derating factor 0.93 0.94 0.95 0.96 0.97 0.98 0.99 1.00 ti4hadc
november 2006 - revised may 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4a250h3bj overvoltage protector figure 7. typical application circuit le79232 dual slic aslic 1 bslic 1 fgnd 1 aslic 2 fgnd 2 bslic 2 bline 2 switch control logic latch p1' p2' p3' ld 1 ld 2 btest 2 vbh battery monitor tsd 1 tsd 2 off 1 off 2 dgnd cfg bringing 2 aline 2 aringing 2 atest 2 btest 1 bringing 1 bline 1 aline 1 aringing 1 atest 1 le75282 dual lcas tisp4125h3bj tisp4a250h3bj tip ring tisp4125h3bj tisp4a250h3bj tip ring vdd b1250t telefuse tip 1 ring 1 tip 2 ring 2 sw sw sw sw sw sw sw sw sw sw sw sw b1250t telefuse b1250t telefuse b1250t telefuse ai-tisp4a-001-a ground ground ground ground applications information
?isp?is a trademark of bourns, ltd., a bourns company, and is registered in u.s. patent and trademark office. ?ourns?is a registered trademark of bourns, inc. in the u.s. and other countries. copyright?2007, bourns, inc. litho in u.s.a. e 05/07 tsp0705 bourns sales offices region phone fax the americas: +1-951-781-5500 +1-951-781-5700 europe: +41-41-7685555 +41-41-7685510 asia-pacific: +886-2-25624117 +886-2-25624116 technical assistance region phone fax the americas: +1-951-781-5500 +1-951-781-5700 europe: +41-41-7685555 +41-41-7685510 asia-pacific: +886-2-25624117 +886-2-25624116 www.bourns.com bourns ? products are available through an extensive network of manufacturer?s representatives, agents and distributors. to obtain technical applications assistance, a quotation, or to place an order, contact a bourns representative in your area.
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